HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 8

no-image

HYB18T512160A

Manufacturer Part Number
HYB18T512160A
Description
512-Mbit Double-Data-Rate-Two SDRAM
Manufacturer
Infineon Technologies AG
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB18T512160AF
Manufacturer:
Infineon
Quantity:
885
Part Number:
HYB18T512160AF-15
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
A 16-bit address bus for 4 and 8 organised
components and a 15-bit address bus for 16
components is used to convey row, column and bank
address information in a RAS-CAS multiplexing style.
The DDR2 device operates with a 1.8 V
supply. An Auto-Refresh and Self-Refresh mode is
1.3
Table 2
Part Number
HYB18T512400AC–5
HYB18T512800AC–5
HYB18T512160AC–5
HYB18T512400AC–3.7
HYB18T512800AC–3.7
HYB18T512160AC–3.7
HYB18T512400AF–5
HYB18T512800AF–5
HYB18T512160AF–5
HYB18T512400AF–3.7
HYB18T512800AF–3.7
HYB18T512160AF–3.7
Note: For product nomenclature see
Data Sheet
Ordering Information
Ordering information
Org. Speed
x4
x8
x16
x4
x8
x16
x4
x8
x16
x4
x8
x16
DDR2–400 3–3–3
DDR2–533 4–4–4
DDR2–400 3–3–3
DDR2–533 4–4–4
Chapter 10
±
0.1 V power
CAS-RCD-RP
Latencies
of this data sheet
8
provided along with various power-saving power-down
modes.
The functionality described and the timing
specifications included in this data sheet are for the
DLL Enabled mode of operation.
The DDR2 SDRAM is available in P-TFBGA package.
512-Mbit Double-Data-Rate-Two SDRAM
Clock
(MHz)
200
266
200
266
HYB18T512[400/800/160]A[C/F]–[3.7/5]
CAS-RCD-RP
Latencies
3–3–3
3–3–3
Clock
(MHz)
200
200
09112003-SDM9-IQ3P
Rev. 1.13, 2004-05
Package
P-TFBGA-60-6
P-TFBGA-84-1
P-TFBGA-60-6
P-TFBGA-84-1
P-TFBGA-60-6
P-TFBGA-84-1
P-TFBGA-60-6
P-TFBGA-84-1
Overview

Related parts for HYB18T512160A