HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 67

• Manufacturer Part Number: HYB18T512160A
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: Infineon Technologies AG

4
Table 19
Symbol
V
V
V
T
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This
Table 20
Symbol
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation,
3) Above 85
4) Self-Refresh period is hard-coded in the chip and therefore it is imperative that the system ensures the DRAM is below
Data Sheet
V
T
STG
DDQ
DDL
IN
OPER
DD
,
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
please refer to the JEDEC document JESD51-2.
the DRAM case temperature must be maintained between 0 - 95
85
V
o
OUT
C case temperature before initiating self-refresh operation.
o
Operating Conditions
Absolute Maximum Ratings
DRAM Component Operating Temperature Range
Parameter
Voltage on
Voltage on
Voltage on VDDL pin relative to
Voltage on any pin relative to
Storage Temperature
Parameter
Operating Temperature
C case temperature the Auto-Refresh command interval has to be reduced to
V
V
DD
DDQ
pin relative to
pin relative to
V
V
V
SS
SS
V
SS
SS
67
Rating
-1.0 to +2.3
-0.5 to +2.3
-0.5 to +2.3
-0.5 to +2.3
-55 to +100
Rating
0 to 95
512-Mbit Double-Data-Rate-Two SDRAM
o
HYB18T512[400/800/160]A[C/F]–[3.7/5]
C under all other specification parameters.
t
REFI
= 3.9 s.
Operating Conditions
09112003-SDM9-IQ3P
Rev. 1.13, 2004-05
Units
V
V
V
V
Units
o
C
C
Notes
1)
1)
1)
1)
1)
Notes
1)2)3)4)