HYB18T512160A Infineon Technologies AG, HYB18T512160A Datasheet - Page 62

• Manufacturer Part Number: HYB18T512160A
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: Infineon Technologies AG

Figure 58
Note: "Precharge" may be an external command or an internal precharge following Write with AP.
Figure 59
Figure 60
Data Sheet
C K , C K
C K , C K
C K E
C K E
C M D
C M D
CK, CK
CKE
CMD
T0
T0
Precharge
T0
Precharge Power Down Mode Entry and Exit
Auto-Refresh command to Power-Down entry
MRS, EMRS command to Power-Down entry
MRS or
EMRS
Refresh
T1
Power-Down
Auto
Precharge
T1
tIS
Entry
T1
NOP
tRP
T2
t
MRD
T2
CKE can go low one clock after an Auto-Refresh command
When tRFC expires the DRAM is in Precharge Power-Down Mode
T2
NOP
T3
tRFC
Enters Precharge Power-Down Mode
T3
T3
NOP
T4
T4
62
NOP
T5
512-Mbit Double-Data-Rate-Two SDRAM
Power-Down
Precharge
HYB18T512[400/800/160]A[C/F]–[3.7/5]
Tn
Exit
T6
NOP
tIS
tis
Tn
Tn+1
T7
tXP
NOP
tXP
Tn+2
Command
Valid
MRS_PD
Functional Description
Command
09112003-SDM9-IQ3P
Valid
Rev. 1.13, 2004-05
ARPD
NOP