K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 20

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

*Note : 1. The row active command of the precharge bank can be issued after t
K4X56163PE-L(F)G
Read With Auto Precharge
If a read with auto-precharge command is issued, the DDR SDRAM automatically enters the precharge operation BL/2 clock later
from a read with auto-precharge command when tRAS(min) is satisfied. If not, the start point of precharge operation will be delayed
until tRAS(min) is satisfied. Once the precharge operation has started, the bank cannot be reactivated and the new command can not
be asserted until the precharge time(tRP) has been satisfied.
CAS Latency=3
Command
The new read/write command of other activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal
< Burst Length=4, CAS Latency= 3>
CK, CK
DQS
DQs
BANK A
ACTIVE
0
NOP
1
Figure.14 Read with auto precharge timing
NOP
2
NOP
3
tRAS(min)
Auto Precharge
READ A
4
Auto-Precharge starts
20
NOP
5
RP
NOP
from this point.
6
*1
Dout0 Dout1 Dout2 Dout3
NOP
7
Mobile-DDR SDRAM
NOP
8
t
RP
NOP
9
* Bank can be reactivated at
NOP
completion of
10
March 2004
NOP
t
RP
11