K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 32

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

K4X56163PE-L(F)G
3. Definitions for IDD:
AC Operating Conditions & Timming Specification
Note : 1. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
Input Crossing Point Voltage, CK and CK inputs
LOW is defined as V
HIGH is defined as V
STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- address and command: inputs changing between HIGH and LOW once per two clock cycles
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE.
2. The value of V
simulation.
Parameter/Condition
IN
IN
IX
≥
≤
is expected to equal 0.5*V
0.1 * V DDQ ;
0.9 * V DDQ ;
DDQ
of the transmitting device and must track variations in the DC level of the same.
Symbol
VIH(AC)
VIX(AC)
VIL(AC)
32
0.8 x VDDQ
0.4 x VDDQ
Min
-0.3
Mobile-DDR SDRAM
0.2 x VDDQ
0.6 x VDDQ
VDDQ+0.3
Max
Unit
V
V
V
March 2004
Note
1
1
2