K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 40

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

Write with Auto Precharge (@BL=8)
K4X56163PE-L(F)G
CK
CK
CKE
CS
RAS
CAS
BA0,BA1
A10/AP
ADDR
(A0~An)
WE
DQS
DQ
DM
COMMAND
Note: 1. The row active command of the precharge bank can be issued after tRP from this point
0
The new read/write command of another activated bank can be issued from this point
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
WRITE
BAa
Ca
1
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
2
3
4
5
6
HIGH
t
WR
7
40
8
Auto precharge start
Note 1
9
t
RP
10
11
Mobile-DDR SDRAM
ACTIVE
BAb
Ra
Cb
12
13
: Don’t care
14
15
March 2004