K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 30

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

Absolute maximum ratings
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
K4X56163PE-L(F)G
DC Operating Conditions & Specifications
DC Operating Conditions
Recommended operating conditions
Notes : 1. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in
Supply voltage(for device with a nominal VDD of 1.8V)
I/O Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Voltage on V
Voltage on V
Voltage on any pin relative to V
simulation.
Storage temperature
Short circuit current
Power dissipation
DDQ
DD
Parameter
Table 10. Absolute maximum ratings
supply relative to V
Parameter
supply relative to V
SS
SS
SS
(Voltage referenced to VSS=0V, TA= -25°C to 85°C)
V
Symbol
IN
VOH(DC)
VOL(DC)
V
VIH(DC)
T
Symbol
VIL(DC)
V
, V
I
VDDQ
DDQ
P
STG
OS
30
VDD
DD
IOZ
D
II
OUT
0.7 x VDDQ
0.9 x VDDQ
Min
-0.3
1.7
1.7
-2
-5
-
-55 ~ +150
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
Value
1.0
50
Mobile-DDR SDRAM
0.3 x VDDQ
0.1 x VDDQ
VDDQ+0.3
Max
1.95
1.95
2
5
-
Unit
uA
uA
V
V
V
V
V
IOH = -0.1mA
IOL = 0.1mA
Unit
mA
°C
W
V
V
V
March 2004
Note
1
1