K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 39

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

Read with Auto Precharge (@BL=8)
K4X56163PE-L(F)G
CK
CK
CKE
CS
RAS
CAS
ADDR
WE
DQS
(CL=3)
DQ
(CL=3)
DM
COMMAND
BA0,BA1
A10/AP
(A0~An)
Note: The row active command of the precharge bank can be issued after tRP from this point
The new read/write command of another activated bank can be issued from this point
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
0
READ
BAa
Ca
1
2
3
Qa0 Qa1 Qa2
4
HIGH
39
Auto precharge start
Note 1
5
Qa3
Qa4 Qa5 Qa6
6
t
RP
7
Qa7
Mobile-DDR SDRAM
8
9
: Don’t care
ACTIVE
BAb
Ra
Cb
10
March 2004