K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 23

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

Command
K4X56163PE-L(F)G
Power down
The device enters power down mode when CKE Low,and it exits when CKE High. Once the power down mode is initiated, all of the
receiver circuits except CK and CKE are gated off to reduce power consumption. The both bank should be in idle state prior to enter-
ing the precharge power down mode and CKE should be set high at least 1 tCK+tIS prior to Row active command. During power
down mode, refresh operations cannot be performed, therefore the device cannot remain in power down mode longer than the
refresh period(tREF) of the device.
CK, CK
CKE
Precharge
0
1
2
Figure.18 Power down entry and exit timing
Precharge
t
IS
power
down
Entry
3
4
5
23
6
Precharge
t
IS
power
(NOP)
down
Exit
t
PDEX
7
Active
8
t
IS
Active
power
down
Entry
Mobile-DDR SDRAM
9
10
11
t
IS
Active
power
down
Exit
12
March 2004
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