K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 5

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

Power Up Sequence for Mobile DDR SDRAM
K4X56163PE-L(F)G
Note:
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define PASR or DS operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when either PASR or DS is used.
The default state without EMRS command issued is half driver strength, and Full array refreshed .
The device is now ready for the operation selected by EMRS.
For operating with PASR or DS, set PASR or DS mode in EMRS setting stage.
In order to adjust another mode in the state of PASR or DS mode, additional EMRS set is required but power up sequence is not needed again at this
time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
- Apply VDD before or at the same time as VDDQ.
CK
CK
CKE
CS
RAS
CAS
ADDR
BA0
BA1
A10/AP
DQ
WE
DQM
0
Precharge
(All Bank)
High level is necessary
1
2
Hi
t
RP
3
4
Auto
Refresh
Hi-Z
5
6
t
7
ARFC
8
Hi-Z
9
5
Auto
Refresh
10 11
12 13 14 15
t
ARFC
Mobile-DDR SDRAM
Normal
MRS
Key
16 17 18 19 20
Extended
MRS
Key
Row Active
(A-Bank)
RAa
RAa
: Don’t care
March 2004