K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 35

• Manufacturer Part Number: K4X56163PE
• Description: 16M x16 Mobile DDR SDRAM
• Manufacturer: Samsung semiconductor

K4X56163PE-L(F)G
AC Operating Test Conditions
Input/Output Capacitance
Output
AC input levels (Vih/Vil)
Input timing measurement reference level
Input signal minimum slew rate
Output timing measurement reference level
Output load condition
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
(Fig. 1) DC Output Load Circuit
10.6KΩ
Parameter
Parameter
1.8V
(V
13.9KΩ
30pF
DD
V
V
=1.8V, V
(V
OH
OL
DD
(DC) = 0.1 x VDDQ, I
(DC) = 0.9 x VDDQ, I
= 1.7V - 1.95V, T
DDQ
=1.8V, T
35
0.8 x VDDQ / 0.2 x VDDQ
Symbol
COUT
A
CIN1
CIN2
CIN3
A
= -25 to 85°C)
OL
= 25
OH
Output
= 0.1mA
= -0.1mA
0.5 x VDDQ
0.5 x VDDQ
See Fig. 2
°C
Value
, f=1MHz)
1.0
(Fig. 2) AC Output Load Circuit
Min
1.5
1.5
3.0
3.0
Mobile-DDR SDRAM
Z0=50Ω
Max
3.0
3.0
5.0
5.0
Vtt=0.5 x V
50Ω
30pF
Unit
V/ns
V
V
V
March 2004
Unit
pF
pF
pF
pF
DDQ