MT55L256L36P MICRON [Micron Technology], MT55L256L36P Datasheet - Page 21

• Manufacturer Part Number: MT55L256L36P
• Description: 8Mb ZBT SRAM
• Manufacturer: MICRON [Micron Technology]

I
(Note 1) (0°C ≤ T
TQFP THERMAL RESISTANCE
BGA THERMAL RESISTANCE
NOTE: 1. V
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_2.p65 – Rev. 6/01
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Idle
CMOS Standby
TTL Standby
Clock Running
Snooze Mode
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
2. I
3. “Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
4. Typical values are measured at +3.3V, +25°C and 10ns cycle time.
5. This parameter is sampled.
configuration.
greater output loading.
is active (not in deselected mode).
DD
DD
is specified with no output current and increases with faster cycle times. I
Q = +3.3V ±0.165V for 3.3V I/O configuration; V
A
≤ +70°C; V
or ≥ V
ADV/LD# ≥ V
All inputs static; CLK frequency = 0
All inputs static; CLK frequency = 0
All inputs ≤ V
All inputs ≤ V
Device selected; All inputs ≤ V
or ≥ V
Device deselected; V
Device deselected; V
Device deselected; V
V
Device selected; V
DD
DD
All inputs ≤ V
Cycle time ≥
- 0.2; Cycle time ≥
IH
= MAX; Outputs open
DD
Test conditions follow standard test methods
; Cycle time ≥
Test conditions follow standard test methods
CONDITIONS
= +3.3V ±0.165V unless otherwise noted)
CKE# ≥ V
IH
and procedures for measuring thermal
SS
SS
; All inputs ≤ V
and procedures for measuring thermal
ZZ ≥ V
+ 0.2 or ≥ V
+ 0.2 or ≥ V
impedance, per EIA/JESD51.
impedance, per EIA/JESD51.
IL
t
IH
KC (MIN)
IH
or ≥ V
DD
;
DD
DD
DD
= MAX;
t
KC (MIN);
= MAX;
= MAX;
= MAX;
CONDITIONS
CONDITIONS
t
DD
DD
IH
KC (MIN)
SS
;
- 0.2;
- 0.2;
+ 0.2
IL
DD
21
Q = +2.5V +0.4V/-0.125V for 2.5V I/O
SYMBOL
I
I
I
I
I
I
SB
DD
SB
SB
SB
DD
2
2
3
4
1
Z
8Mb: 512K x 18, 256K x 32/36
TYP
200
0.5
0.5
10
45
Micron Technology, Inc., reserves the right to change products or specifications without notice.
6
500
120
DD
25
10
25
10
-6
PIPELINED ZBT SRAM
SYMBOL
Q increases with faster cycle times and
SYMBOL
θ
θ
θ
θ
JA
JC
JA
JC
MAX
-7.5
400
25
10
25
75
10
TYP
TYP
40
40
300
8
9
-10
20
10
25
60
10
UNITS NOTES
UNITS NOTES
UNITS NOTES
©2001, Micron Technology, Inc.
°C/W
°C/W
°C/W
°C/W
m A
m A
m A
m A
m A
m A
2, 3, 4
2, 3, 4
3, 4
3, 4
3, 4
4
5
5
5
5