C8051F350-TB Silicon Laboratories Inc, C8051F350-TB Datasheet - Page 75
![no-image](/images/manufacturer_photos/0/6/609/silicon_laboratories_inc_sml.jpg)
C8051F350-TB
Manufacturer Part Number
C8051F350-TB
Description
PROTOTYPINGBOARDWITH C8051F350
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Specifications of C8051F350-TB
Contents
Board
Processor To Be Evaluated
C8051F35x
Interface Type
USB
Silicon Manufacturer
Silicon Labs
Core Architecture
8051
Silicon Core Number
C8051F350
Silicon Family Name
C8051F35x
Kit Contents
Board
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
C8051F350
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
- Current page: 75 of 234
- Download datasheet (2Mb)
Table 7.1. Voltage Reference Electrical Characteristics
V
Internal Reference
Output Voltage
VREF Short-Circuit Current
VREF Temperature Coefficient
Load Regulation
VREF Turn-on Time 1 (0.01%)
VREF Turn-on Time 2 (0.01%)
VREF Turn-on Time 3 (0.01%)
Power Supply Rejection
External Reference
Input Voltage Range
(VREF+ – VREF–)
Voltage on VREF+ or VREF– pin
with respect to AGND
Input Current
Common Mode Rejection Ratio
Power Specifications
Internal Reference Bias and Band
Gap Generator
DD
= 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
0.1 µF ceramic bypass capacitor
4.7 µF tantalum, 0.1 µF ceramic
Load = 0 to 200 µA to AGND
no bypass capacitor
bypass capacitors
25 °C ambient
VREF = 2.5 V
Conditions
Rev. 1.1
To AGND
To AV+
C8051F350/1/2/3
2.35
Min
—
—
—
—
—
—
—
—
—
—
—
1
0
2.45
Typ
400
120
106
0.5
2.5
3.9
20
15
50
—
9
3
2
Max
2.50
AV+
AV+
135
—
—
—
—
—
—
—
—
—
—
ppm/µA
ppm/°C
Units
mA
ms
µA
dB
µA
dB
µA
µs
µs
V
V
V
75
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