HD64F3337YCP16 Renesas Electronics America, HD64F3337YCP16 Datasheet - Page 428

• Manufacturer Part Number: HD64F3337YCP16
• Description: IC H8 MCU FLASH 60K 84PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16

• Core Processor: H8/300
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• Package: 84PLCC
• Family Name: H8
• Maximum Speed: 16 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 8 Bit
• Number Of Programmable I/os: 74
• Interface Type: HIF/I2C/SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

PVOK:
NGEND:
19.4.4
To erase the flash memory, follow the erasing algorithm shown in figure 19.11. This erasing
algorithm can erase data without subjecting the device to voltage stress or impairing the reliability
of programmed data.
To erase flash memory, before starting to erase, first place all memory data in all blocks to be
erased in the programmed state (program all memory data to H'00). If all memory data is not in the
programmed state, follow the sequence described later (figure 18-17) to program the memory data
to zero. Select the flash memory areas to be erased with erase block registers 1 and 2 (EBR1 and
EBR2). Next set the E bit in FLMCR, selecting erase mode. The erase time is the time during
which the E bit is set. To prevent overerasing, use a software timer to divide the erase time into
repeated 10 ms intervals, and perform erase operations a maximum of 3000 times so that the total
erase time does not exceed 30 seconds. Overerasing, due to program runaway for example, can
give memory cells a negative threshold voltage and cause them to operate incorrectly. Before
selecting erase mode, set up the watchdog timer so as to prevent overerasing.
19.4.5
In erase-verify mode, after data has been erased, it is read to check that it has been erased
correctly. After the erase time has elapsed, exit erase mode (clear the E bit to 0) and select erase-
verify mode (set the EV bit to 1). Before reading data in erase-verify mode, write H'FF dummy
data to the address to be read. This dummy write applies an erase-verify voltage to the memory
cells at the latched address. If the flash memory is read in this state, the data at the latched address
will be read. After the dummy write, wait 2 s or more before reading. When performing the
initial dummy write, wait 4 s or more after selecting erase-verify mode. If the read data has been
successfully erased, perform an erase-verify (dummy write, wait 2 s or more, then read) for the
next address. If the read data has not been erased, select erase mode again and repeat the same
erase and erase-verify sequence through the last address. Do not repeat the erase and erase-verify
sequence more than 3000 times, however.
396
Erase Mode
Erase-Verify Mode
CMP.B
BEQ
BRA
BCLR
MOV.B
MOV.B
One byte programmed
Programming error
#H'32,
NGEND
PRGMS
#2,
#H'00,
R6L,
@FLMCR:8
R6L
@EBR*:8
R6L
; Program-verify executed 50 times?
; If program-verify executed 50 times, branch to NGEND
; Program again
;
;
;
Clear EBR
Clear PV bit
*