XC912BC32CFU8 Motorola Semiconductor Products, XC912BC32CFU8 Datasheet - Page 114

• Manufacturer Part Number: XC912BC32CFU8
• Description: M68HC12B Family Data Sheet
• Manufacturer: Motorola Semiconductor Products

FLASH EEPROM
8.6 Erasing the FLASH EEPROM
Data Sheet
114
This sequence demonstrates the recommended procedure for erasing the FLASH
EEPROM. The V
the first time.
The flowchart in
10. If all of the FLASH EEPROM locations are erased, repeat the same number
11. Read the entire array to ensure that the FLASH EEPROM is erased.
12. Clear LAT.
13. Turn off V
1. Turn on V
2. Set the LAT bit and ERAS bit to configure the FLASH EEPROM for erasing.
3. Write to any valid address in the FLASH array. This allows the erase voltage
4. Apply erase voltage by setting ENPE.
5. Delay for a single erase pulse, t
6. Remove erase voltage by clearing ENPE.
7. Delay while high voltage is turning off, t
8. Read the entire array to ensure that the FLASH EEPROM is erased.
9. If all of the FLASH EEPROM locations are not erased, repeat steps 4
to be turned on; the data written and the address written are not important.
The boot block will be erased only if the control bit BOOTP is negated.
through 7 until either the remaining locations are erased or until the
maximum erase pulses have been applied, n
of pulses as required to erase the array. This provides 100 percent erase
margin.
FP
FP
Figure 8-6
FP
. Apply program/erase voltage to the V
. Reduce voltage on V
pin voltage must be at the proper level prior to executing step 4
FLASH EEPROM
demonstrates the recommended erase sequence.
EPULSE
FP
pin to V
.
VERASE
EP
DD
.
.
.
M68HC12B Family — Rev. 8.0
FP
pin.
MOTOROLA