MC908GP32CPE Freescale Semiconductor, MC908GP32CPE Datasheet - Page 254

• Manufacturer Part Number: MC908GP32CPE
• Description: IC MCU 8MHZ 32K FLASH 40-DIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GP32CPE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 33
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 40-DIP (0.600", 15.24mm)
• Processor Series: HC08GP
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 33
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical Specifications
254
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance
FLASH data retention time
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
clearing HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25 Cusing the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Read
RCV
HV
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by
is defined as the frequency range for which the FLASH memory can be read.
(4)
Characteristic
(5)
NVS
+ t
NVH
MC68HC908GP32 Data Sheet, Rev. 10
+ t
PGS
+ (t
PROG
x 64) ≤ t
Symbol
t
HV
t
t
MErase
t
RCV
t
PROG
t
t
t
NVHL
HV
NVH
PGS
NVS
—
—
maximum.
(3)
(2)
10 k
Min
100
10
30
15
—
4
5
5
1
100 k
Typ
100
—
—
—
—
—
—
—
—
Freescale Semiconductor
Max
40
—
—
—
—
—
—
—
—
4
Cycles
Years
Unit
ms
ms
µs
µs
µs
µs
µs
µs