R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 1327

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
25.4.5
Table 25.37 D/A Conversion Characteristics
Conditions: V
25.4.6
Table 25.38 Flash Memory Characteristics
Conditions: V
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Item
Resolution
Conversion time
Absolute accuracy
Item
Programming and erase
count*
Programming time
(per 4 bytes)
Erase time (per 1 block)
Programming and erase
voltage
Read voltage
Access state
1
D/A Conversion Characteristics
Flash Memory Characteristics
φ = 8 MHz to 33 MHz
φ = 8 MHz to 33 MHz
CC
CC
= 4.5 V to 5.5 V, AV
= 4.5 V to 5.5 V, AV
Symbol
Min.
8
⎯
⎯
⎯
Test
conditions Applicable area
CC
CC
= 4.5 V to 5.5 V, V
= 4.5 V to 5.5 V, V
Typ.
8
⎯
±1.0
⎯
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
Max.
8
10
±2.0
±1.0
ref
ref
= 4.5 V to AV
= 4.5 V to AV
4.5
4.5
1
2
Standard value
Min.
1000*
10000*
⎯
⎯
⎯
⎯
Unit
Bit
μs
LSB
LSB
2
2
Section 25 Electrical Characteristics
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
150
300
300
300
4 MΩ resistive load
Test Conditions
20 pF capacitive load
2 MΩ resistive load
CC
CC
, V
, V
SS
SS
⎯
⎯
⎯
⎯
⎯
⎯
5.5
5.5
⎯
⎯
Max.
= AV
= AV
Page 1297 of 1372
SS
SS
= 0 V,
= 0 V,
Unit
Times
μs
ms
V
V
State