R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 279

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
(2)
When DRAM space is accessed in DMAC or EXDMAC single address transfer mode, full access
(normal access) is always performed. With the DRAM interface, the DACK or EDACK output
goes low from the T
In modes other than DMAC or EXDMAC single address transfer mode, burst access can be used
when accessing DRAM space.
Figure 6.54 shows the DACK or EDACK output timing for the DRAM interface when DDS = 0 or
EDDS = 0.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Read
Write
Note: n = 2 to 5
Figure 6.54 Example of DACK/EDACK Output Timing when DDS = 0 or EDDS = 0
When DDS = 0 or EDDS = 0
DACK or EDACK
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
T
p
Row address
(RAST = 0, CAST = 1)
High
High
T
r
T
c1
Column address
T
c2
Section 6 Bus Controller (BSC)
T
c3
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