R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 288

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.8.8
When the command interval specification from the ACTV command to the next READ/WRIT
command cannot be satisfied, 1 to 3 states (Trw) that output the NOP command can be inserted
between the Tr cycle that outputs the ACTV command and the Tc1 cycle that outputs the column
address by setting the RCD1 and RCD0 bits of DRACCR. Use the optimum setting for the wait
time according to the synchronous DRAM connected and the operating frequency of this LSI.
Figure 6.58 shows an example of the timing when the one Trw state is set.
Page 258 of 1372
Figure 6.58 Example of Access Timing when Row Address Output Hold State Is 1 State
Row Address Output State Control
Read
Write
Address bus
DQMU, DQML
DQMU, DQML
Precharge-sel
Data bus
Data bus
SDRAMφ
(RCD1 = 0, RCD0 = 1, SDWCD = 0, CAS Latency 2)
CKE
CKE
RAS
RAS
CAS
CAS
WE
WE
φ
Column
address
PALL
PALL
T
p
ACTV
ACTV
T
r
Row address
Row address
High
NOP
High
T
rw
NOP
READ
T
c1
Column address
H8S/2426, H8S/2426R, H8S/2424 Group
WRIT
T
cl
NOP
REJ09B0466-0350 Rev. 3.50
NOP
T
c2
Jul 09, 2010