R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 209

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8S/2426, H8S/2426R, H8S/2424 Group
6.3.10
DRACCR is used to set the DRAM/synchronous DRAM interface bus specifications.
Note: The synchronous DRAM interface is not supported by the H8S/2426 Group and H8S/2424
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Bit
15
14
13
12
11
Group. The DRAM interface is not supported by the 5-V version.
Bit Name
DRMI
⎯
TPC1
TPC0
SDWCD
DRAM Access Control Register (DRACCR)
Initial Value
0
0
0
0
0*
R/W
R/W
R/W
R/W
R/W
R/W
Description
Idle Cycle Insertion
An idle cycle can be inserted after a
DRAM/synchronous DRAM access cycle when a
continuous normal space access cycle follows a
DRAM/synchronous DRAM access cycle. Idle
cycle insertion conditions, setting of number of
states, etc., comply with settings of bits ICIS2,
ICIS1, ICIS0, and IDLC in BCR register
0: Idle cycle not inserted
1: Idle cycle inserted
Reserved
This bit can be read from or written to. However,
the write value should always be 0.
Precharge State Control
These bits select the number of states in the RAS
precharge cycle in normal access and refreshing.
00: 1 state
01: 2 states
10: 3 states
11: 4 states
CAS Latency Control Cycle Disabled during
Continuous Synchronous DRAM Space Write
Access
Disables CAS latency control cycle (Tcl) inserted
by WTCRB (H) settings during synchronous
DRAM write access (see figure 6.5).
0: Enables CAS latency control cycle
1: Disables CAS latency control cycle
Section 6 Bus Controller (BSC)
Page 179 of 1372