R4F24269NVFQV Renesas Electronics America, R4F24269NVFQV Datasheet - Page 328

• Manufacturer Part Number: R4F24269NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24269NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
(b) Normal space access after a continuous synchronous DRAM space write access
If a normal space read cycle occurs after a continuous synchronous DRAM space write access
while the ICIS2 bit is set to 1 in BCR, idle cycle is inserted at the start of the read cycle. The
number of states of the idle cycle to be inserted is in accordance with the setting of bit IDLC. It is
not in accordance with the DRMI bit in DRACCR.
Figure 6.92 shows an example of idle cycle operation when the ICIS2 bit is set to 1.
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Figure 6.92 Example of Idle Cycle Operation after Continuous Synchronous DRAM Space
Precharge-sel
DQMU, DQML
Address bus
HWR, LWR
Data bus
CKE
CAS
RAS
WE
RD
Write Access (IDLC = 0, ICIS1 = 0, SDWCD = 1, CAS Latency 2)
φ
PALL ACTV
Column
address
T
Continuous synchronous
DRAM space write
p
address
address
Row
Row
T
r
NOP WRIT
T
c1
address
Column
T
c2
Idle cycle
External address space read
T
i
External address
External address
T
1
High
NOP
T
2
H8S/2426, H8S/2426R, H8S/2424 Group
T
3
READ
Synchronous
DRAM space read
T
Column address 2
REJ09B0466-0350 Rev. 3.50
c1
T
Cl
NOP
T
c2
Jul 09, 2010