HD64F2612FA20 Renesas Electronics America, HD64F2612FA20 Datasheet - Page 505

• Manufacturer Part Number: HD64F2612FA20
• Description: IC H8S MCU FLASH 128K 80QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2600r

Specifications of HD64F2612FA20

• Core Processor: H8S/2600
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 43
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 80-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

An example in which flash memory block area EB0 is overlapped is shown in figure 18.8.
1. The RAM area to be overlapped is fixed at a 1-kbyte area in the range H'FFE000 to H'FFE3FF.
2. The flash memory area to overlap is selected by RAMER from a 1-kbyte area of the EB0 to
3. The overlapped RAM area can be accessed from both the flash memory addresses and RAM
4. When the RAMS bit in RAMER is set to 1, program/erase protection is enabled for all flash
5. A RAM area cannot be erased by execution of software in accordance with the erase
6. Block area EB0 contains the vector table. When performing RAM emulation, the vector table
EB3 blocks.
addresses.
memory blocks (emulation protection). In this state, setting the P1 or E1 bit in FLMCR1 to 1
does not cause a transition to program mode or erase mode.
algorithm.
is needed in the overlap RAM.
H'000000
H'0003FF
H'000400
H'0007FF
H'000800
H'000BFF
H'000C00
H'000FFF
H'FFE000
H'FFE3FF
Figure 18.8 Example of RAM Overlap Operation
Normal memory map
Flash memory
On-chip RAM
(1 kbyte)
(EB1)
(EB2)
(EB3)
(EB0)
Rev. 7.00 Sep. 11, 2009 Page 469 of 566
RAM overlap memory map
Flash memory
Flash memory
On-chip RAM
On-chip RAM
H'FFE000 to
(Shadow of
H'FFE3FF)
(1 kbyte)
(EB0)
(EB2)
(EB3)
REJ09B0211-0700
Section 18 ROM