DF2265TE13V Renesas Electronics America, DF2265TE13V Datasheet - Page 672

• Manufacturer Part Number: DF2265TE13V
• Description: IC H8S/2265 MCU FLASH 100TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2200r

Specifications of DF2265TE13V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 13MHz
• Connectivity: I²C, SCI, SmartCard
• Peripherals: LCD, POR, PWM, WDT
• Number Of I /o: 67
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Electrical Characteristics
Notes: 1. Make each time setting in accordance with the program or erase algorithm.
Rev. 5.00 Sep. 01, 2009 Page 620 of 656
REJ09B0071-0500
2. Programming time per 128 bytes (Shows the total period for which the P1 bit in the
3. Block erase time (Shows the total period for which the E1 bit in FLMCR1 is set. It does
4. The maximum programming time value (t p (max.)):
5. For the maximum erase time (t
6. The minimum times that all characteristics after rewriting are guaranteed. (A range
7. The reference value at 25°C. (Normally, it is a reference that rewriting is enabled up to
8. Data hold characteristics when rewriting is performed within the range of specifications
flash memory control register (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
t
(t
wait time after E1 bit setting (t
t
between 1 and minimum value is guaranteed.)
this value.)
including minimum value.
P
E
(max.) = Wait time after P1 bit setting (t
sp30
(max.) = Wait time after E1 bit setting (t
+ t
sp10
) × 6 + (t
sp200
) × 994
se
E
) and the maximum erase count (N):
(max.)), the following relationship applies between the
sp
se
) × maximum programming count (N)
) × maximum erase count (N)