DF2377RVFQ33 Renesas Electronics America, DF2377RVFQ33 Datasheet - Page 264

IC H8S MCU FLASH 3V 384K 144LQFP

DF2377RVFQ33

Manufacturer Part Number
DF2377RVFQ33
Description
IC H8S MCU FLASH 3V 384K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2377RVFQ33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
384KB (384K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 6 Bus Controller (BSC)
6.6.7
If the RAST bit is set to 1 in DRAMCR, the RAS signal goes low from the beginning of the T
state, and the row address hold time and DRAM read access time are changed relative to the fall of
the RAS signal. Use the optimum setting according to the DRAM connected and the operating
frequency of this LSI. Figure 6.23 shows an example of the timing when the RAS signal goes low
from the beginning of the T
Rev.7.00 Mar. 18, 2009 page 196 of 1136
REJ09B0109-0700
Read
Write
Note: n = 2 to 5
Figure 6.23 Example of Access Timing when RAS Signal Goes Low from Beginning
Row Address Output State Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
T
of T
p
Row address
r
State (CAST = 0)
T
r
High
High
T
c1
Column address
T
c2
r

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