MC56F8323VFB60 Freescale Semiconductor, MC56F8323VFB60 Datasheet - Page 130

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MC56F8323VFB60

Manufacturer Part Number
MC56F8323VFB60
Description
IC MPU HYBRID DSP 32K 64-LQFP
Manufacturer
Freescale Semiconductor
Series
56F8xxxr
Datasheet

Specifications of MC56F8323VFB60

Core Processor
56800
Core Size
16-Bit
Speed
60MHz
Connectivity
CAN, SCI, SPI
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
27
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
2.25 V ~ 3.6 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
64-LQFP
For Use With
MC56F8323EVME - BOARD EVALUATION MC56F8323
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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C, the internal [dynamic component], is classic C*V
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V
of the IO cell types used on the 56800E reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change.
in the IO cells as a function of capacitive load. In these cases:
where:
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found
to be fairly low when averaged over a period of time.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the
device. Sum the total of all V
0.5 for the purposes of these rough calculations. For instance, if there is a total of eight PWM outputs
driving 10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored,
as it is assumed to be negligible.
130
Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
8mA CMOS 3-State Output Pad with Input-Enabled Pull-Up
4mA CMOS 3-State Output Pad with Input-Enabled Pull-Up
TotalPower = Σ((Intercept + Slope*Cload)*frequency/10MHz)
Table 10-25 IO Loading Coefficients at 10MHz
2
/R or IV to arrive at the resistive load contribution to power. Assume V =
56F8323 Technical Data, Rev. 17
Table 10-25
provides coefficients for calculating power dissipated
2
*F CMOS power dissipation corresponding to the
Intercept
1.15mW
1.3
2
*F, although simulations on two
0.11mW / pF
0.11mW / pF
Slope
Freescale Semiconductor
Preliminary

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