M30260F6AGP#U3 Renesas Electronics America, M30260F6AGP#U3 Datasheet - Page 249

• Manufacturer Part Number: M30260F6AGP#U3
• Description: IC M16C MCU FLASH 48K 48LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/Tiny/26r

Specifications of M30260F6AGP#U3

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, PWM, Voltage Detect, WDT
• Number Of I /o: 39
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

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17. Flash Memory Version
17.1 Flash Memory Performance
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Table 17.1. Flash Memory Version Specifications
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Flash memory operating mode
Erase block
Program method
Erase method
Program, erase control method
Protect method
Number of commands
Program/Erase
Endurance
Data Retention
ROM code protection
C
The flash memory version is functionally the same as the mask ROM version except that it internally con-
tains flash memory.
In the flash memory version, the flash memory can perform in three rewrite mode : CPU rewrite mode,
standard serial I/O mode and parallel I/O mode.
Table 17.1 shows the flash memory version specifications. (Refer to Table 1.1 or Table 1.2 for the items not
listed in Table 17.1.)
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1. Program and erase endurance definition Program and erase endurance are the erase endurance of each block. If
2. To use the limited number of erasure efficiently, write to unused address within the block instead of rewrite. Erase
0 .
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B
0
the program and erase endurance are n times (n=100,1,000,10,000), each block can be erased n times. For
example, if a 2-Kbyte block A is erased after writing 1 word data 1024 times, each to different addresses, this is
counted as one program and erasure.However, data cannot be written to the same address more than once
without erasing the block. (Rewrite disabled)
block only after all possible address are used. For example, an 8-word program can be written 128 times before
erase is necessary. Maintaining an equal number of erasure between Block A and B will also improve efficiency.
We recommend keeping track of the number of times erasure is used.
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Block 0 to 3 (program area)
Block A and B (data are) (2)
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3 modes (CPU rewrite, standard serial I/O, parallel I/O)
In units of word
Block erase
Program and erase controlled by software command
All user blocks are write protected by bit FMR16.
In addition, the block 0 and block 1 are write protected by bit FMR02
5 commands
100 times, 1,000 times (See Tables 1.7, 1.9, and 1.10 )
100 times, 10,000 times (See Tables 1.7, 1.9, and 1.10 )
Parallel I/O and standard serial I/O modes are supported.
See Figure 17.2.1 to 17.2.3 Flash Memory Block Diagram
20 years (Topr = 55 C)
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Specification
17. Flash Memory Version