IAR-KSK-IMX25 Freescale Semiconductor, IAR-KSK-IMX25 Datasheet - Page 21
![KIT DEVELOPMENT I.MX257, ARM926](/photos/37/58/375862/imx25kbsbd_sml.jpg)
IAR-KSK-IMX25
Manufacturer Part Number
IAR-KSK-IMX25
Description
KIT DEVELOPMENT I.MX257, ARM926
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Type
MCUr
Datasheets
1.MCIMX25WPDKJ.pdf
(2 pages)
2.IAR-KSK-IMX25.pdf
(154 pages)
3.IAR-KSK-IMX25.pdf
(2 pages)
4.IAR-KSK-IMX25.pdf
(57 pages)
Specifications of IAR-KSK-IMX25
Contents
Board, Cables, CD, Debugger, Power Supply
Processor To Be Evaluated
I.MX257
Processor Series
i.MX25
Data Bus Width
16 bit
Interface Type
UART, JTAG, USB, Ethernet, SD/MMC
Core
ARM926EJ-S
Silicon Manufacturer
Freescale
Core Architecture
ARM
Core Sub-architecture
ARM9
Silicon Core Number
I.MX2
Silicon Family Name
I.MX25
Mcu Supported Families
I.MX25
For Use With/related Products
i.MX25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- MCIMX25WPDKJ PDF datasheet
- IAR-KSK-IMX25 PDF datasheet #2
- IAR-KSK-IMX25 PDF datasheet #3
- IAR-KSK-IMX25 PDF datasheet #4
- Current page: 21 of 154
- Download datasheet (2Mb)
3.5.1.1
Table 17
1.8V (± 5%) applications.
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
3. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition: BCS model, 1.95 V, and 105 °C.
Freescale Semiconductor
High-level output voltage
Low-level output voltage
High-level DC CMOS input voltage
Low-level DC CMOS input voltage
Differential receiver VTH+
Differential receiver VTH-
Input current (no pull-up/down)
High-impedance I/O supply current
High-impedance core supply current
High-level output current
Low-level output current
wcs model, 1.65 V, and 105 °C.
DC Electrical Characteristics
shows the I/O parameters for mobile DDR. These settings are suitable for mDDR and DDR2
DDR_TYPE = 00 Standard Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 17. Mobile DDR I/O DC Electrical Characteristics
Icc-ovdd
Symbol
Icc-vddi
VTH+
VTH-
Voh
VIH
VIL
Vol
Ioh
IIN
Iol
I
I
Vol = 0.2 × OVDDV
Test Conditions
VI = OVDD or 0
I
I
Standard Drive
Standard Drive
OH
VI = VDD or 0
OL
I
Voh = 0.8 ×
VI = OVDD
Max. Drive
Max. Drive
OH
High Drive
High Drive
I
OL
OVDDV
= Specified
= Specified
VI = 0
Drive
Drive
= –1mA
= 1mA
—
—
—
OVDD – 0.08
0.7 × OVDD
0.8 × OVDD
–10.8
–100
Min.
–3.6
–7.2
10.8
–0.3
3.6
7.2
—
—
—
—
OVDD
Typ.
—
—
—
—
—
—
—
—
—
0
0.2 × OVDD
0.3 × OVDD
OVDD+0.3
Max.
1220
0.08
990
100
110
60
—
—
—
—
Units
mA
mA
mV
mV
nA
nA
nA
V
V
V
V
Notes
2, 3
2, 3
—
—
—
1
21
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