IAR-KSK-IMX25 Freescale Semiconductor, IAR-KSK-IMX25 Datasheet - Page 38

KIT DEVELOPMENT I.MX257, ARM926

IAR-KSK-IMX25

Manufacturer Part Number
IAR-KSK-IMX25
Description
KIT DEVELOPMENT I.MX257, ARM926
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Type
MCUr

Specifications of IAR-KSK-IMX25

Contents
Board, Cables, CD, Debugger, Power Supply
Processor To Be Evaluated
I.MX257
Processor Series
i.MX25
Data Bus Width
16 bit
Interface Type
UART, JTAG, USB, Ethernet, SD/MMC
Core
ARM926EJ-S
Silicon Manufacturer
Freescale
Core Architecture
ARM
Core Sub-architecture
ARM9
Silicon Core Number
I.MX2
Silicon Family Name
I.MX25
Mcu Supported Families
I.MX25
For Use With/related Products
i.MX25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Note:
1. Maximum condition for tpr, tpo, tpi, and tpv: wcs model, 1.1 V, I/O 3.0 V, and 105 °C. Minimum condition for tpr, tpo, and tpv:
2. Minimum condition for tps: wcs model, 1.1 V, I/O 3.0 V, and 105 °C. tps is measured between VIL to VIH for rising edge and
3. Maximum condition for tdit: bcs model, 1.3 V, I/O 3.6 V, and –40 °C.
4. Maximum condition for tpi and trfi: wcs model, 1.1 V, I/O 3.0 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
Table 28
38
Output pad slew rate (max. drive)
Output pad slew rate (high drive)
Output pad slew rate (standard drive)
Output pad dI/dt (max. drive)
Output pad dI/dt (high drive)
Output pad dI/dt (standard drive)
Input pad transition times
Input pad propagation delay, 50%–50%
Input pad propagation delay, 40%–60%
Duty cycle
Clock frequency
Output pad transition times (max. drive)
Output pad transition times (high drive)
Output pad transition times (standard drive)
bcs model, 1.3 V, I/O 3.6 V and –40 °C. Input transition time from core is 1 ns (20%–80%).
between VIH to VIL for falling edge.
I/O 3.6 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
shows AC parameters for SDRAM pbijtov18_33_ddr_clk I/O.
Parameter
Parameter
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 28. AC Parameters for SDRAM pbijtov18_33_ddr_clk I/O
Table 27. AC Parameters for SDRAM I/O (continued)
Symbol
Symbol
Fduty
tpr
tpr
tpr
tps
tps
tps
tdit
tdit
tdit
trfi
tpi
tpi
f
Condition
Condition
25 pF
25 pF
25 pF
1.0 pF
1.0 pF
50 pF
50 pF
50 pF
Load
50 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
25 pF
Load
0.82/0.87
1.56/1.67
1.23/1.31
2.31/2.47
2.44/2.60
4.65/4.99
Rise/Fall
Rise/Fall
1.11/1.20
0.97/0.65
0.76/0.80
0.40/0.43
0.38/0.41
0.20/0.22
0.07/0.08
0.35/1.17
1.18/1.99
Min.
Min.
40
89
94
59
62
29
31
1.14/1.13
2.13/2.09
1.71/1.68
3.22/3.12
3.38/3.27
6.38/6.23
1.74/1.75
0.92/0.94
1.16/1.19
0.61/0.63
0.59/0.60
0.31/0.32
0.11/0.12 0.16/0.20
0.63/1.53 1.16/2.04
1.45/2.35 1.97/2.85
Typ.
Typ.
198
209
132
139
50
65
69
1.62/1.50
3.015/2.7
2.39/2.22
4.53/4.16
4.73/4.38
9.05/8.23
Rise/Fall
2.42/2.46
1.39/1.30
1.76/1.66
0.93/0.87
0.89/0.82
0.47/0.43
Rise/Fall
Max.
Max.
133
398
421
265
279
132
139
60
7
Freescale Semiconductor
Units
mA/ns
mA/ns
mA/ns
Units
MHz
V/ns
V/ns
V/ns
ns
ns
ns
%
ns
ns
Notes
Notes
1
1
2
3
4

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