IAR-KSK-IMX25 Freescale Semiconductor, IAR-KSK-IMX25 Datasheet - Page 22
![KIT DEVELOPMENT I.MX257, ARM926](/photos/37/58/375862/imx25kbsbd_sml.jpg)
IAR-KSK-IMX25
Manufacturer Part Number
IAR-KSK-IMX25
Description
KIT DEVELOPMENT I.MX257, ARM926
Manufacturer
Freescale Semiconductor
Series
i.MX25r
Type
MCUr
Datasheets
1.MCIMX25WPDKJ.pdf
(2 pages)
2.IAR-KSK-IMX25.pdf
(154 pages)
3.IAR-KSK-IMX25.pdf
(2 pages)
4.IAR-KSK-IMX25.pdf
(57 pages)
Specifications of IAR-KSK-IMX25
Contents
Board, Cables, CD, Debugger, Power Supply
Processor To Be Evaluated
I.MX257
Processor Series
i.MX25
Data Bus Width
16 bit
Interface Type
UART, JTAG, USB, Ethernet, SD/MMC
Core
ARM926EJ-S
Silicon Manufacturer
Freescale
Core Architecture
ARM
Core Sub-architecture
ARM9
Silicon Core Number
I.MX2
Silicon Family Name
I.MX25
Mcu Supported Families
I.MX25
For Use With/related Products
i.MX25
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- MCIMX25WPDKJ PDF datasheet
- IAR-KSK-IMX25 PDF datasheet #2
- IAR-KSK-IMX25 PDF datasheet #3
- IAR-KSK-IMX25 PDF datasheet #4
- Current page: 22 of 154
- Download datasheet (2Mb)
3.5.1.2
Table 18
Note:
1. Simulation circuit for parameters Voh and Vol for I/O cells is below
2. Minimum condition: bcs model, OVDD = 3.6 V, and –40 °C. Typical condition: typical model, OVDD = 3.3 V, and 25 °C.
3. Typical condition: typical model, OVDD = 3.3 V, and 25 °C. Maximum condition: bcs model, OVDD = 3.6 V, and 105 °C.
3.5.1.3
Table 19
22
High-level output voltage
Low-level output voltage
Low-level DC input voltage
Input current (no pull-up/down)
High-impedance I/O supply current Icc-ovdd
High-impedance core supply
current
High-level output current
Low-level output current
High-level DC input voltage
High-level output voltage
Low-level output voltage
Output min. source current
Output min. sink current
DC input logic high
DC input logic low
Maximum condition: wcs model, OVDD = 3.0 V, and 105 °C.
DC Electrical Characteristics
DC Electrical Characteristics
shows the DC I/O parameters for SDRAM.
shows the I/O parameters for DDR2 (SSTL_18).
DDR_TYPE = 01 SDRAM I/O DC Parameters
DDR_TYPE = 10 Max Setting DDR I/O DC Parameters
i.MX25 Applications Processor for Consumer and Industrial Products, Rev. 8
Table 19. DDR2 (SSTL_18) I/O DC Electrical Characteristics
Table 18. SDRAM DC Electrical Characteristics
Symbol
VIH(dc)
VIL(dc)
Symbol
Icc-vddi
Voh
IIoh
Vol
IIol
Voh
VIH
VIL
Vol
Ioh
IIN
Iol
I
I
Conditions
(Ioh = 4, 8, 12, 16mA)
Ioh = Specified Drive
Ioh = Specified Drive
(Ioh = –4, –8, –12,
Test Conditions
VI = OVDD or 0
Test
Standard Drive
Standard Drive
VI = VDD or 0
—
—
—
—
—
—
VI = OVDD
Max. Drive
Max. Drive
High Drive
High Drive
–16mA)
VI = 0
—
—
OVDD/2 + 0.125
OVDD – 0.28
–0.3 V
–13.4
Min.
13.4
—
–0.3 V
–12.0
Min.
–4.0
–8.0
12.0
2.4
4.0
8.0
2.0
—
—
—
—
Typ.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
OVDD/2 – 0.125
OVDD + 0.3
Max.
0.28
—
—
—
Max.
1180
1220
Freescale Semiconductor
150
0.4
3.6
0.8
80
—
—
—
Units
Units
mA
mA
mA
mA
V
V
V
V
nA
nA
nA
V
V
V
V
Notes
Notes
—
—
—
2, 3
2, 3
1
2
—
—
—
1
1
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