MT47H32M16HR-3:F Micron Technology Inc, MT47H32M16HR-3:F Datasheet - Page 48

IC DDR2 SDRAM 512MBIT 3NS 84FBGA

MT47H32M16HR-3:F

Manufacturer Part Number
MT47H32M16HR-3:F
Description
IC DDR2 SDRAM 512MBIT 3NS 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of MT47H32M16HR-3:F

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (32Mx16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-TFBGA
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1466

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Table 20: Output Characteristics
Figure 14: Output Slew Rate Load
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter
Output impedance
Pull-up and pull-down mismatch
Output slew rate
Notes:
Output
(V
OUT
1. Absolute specifications: 0°C ≤ T
2. Impedance measurement conditions for output source DC current: V
3. Mismatch is an absolute value between pull-up and pull-down; both are measured at
4. Output slew rate for falling and rising edges is measured between V
5. The absolute value of the slew rate as measured from V
6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when T
V
V
rent: V
between 0V and 280mV.
the same temperature and voltage.
V
rate is measured between DQS - DQS# = –500mV and DQS# - DQS = +500mV. Output
slew rate is guaranteed by design but is not necessarily tested on each device.
or greater than the slew rate as measured from V
teed by design and characterization.
40°C and 0°C.
V
)
OUT
DDQ
TT
TT
Output Electrical Characteristics and Operating Conditions
+ 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew
=
= 1420mV; (V
and V
V
DDQ
DDQ
25Ω
Reference
point
= 1.7V; V
DDQ
/2
- 280mV. The impedance measurement condition for output sink DC cur-
Min
See Output Driver Characteristics (page 49)
1.5
0
OUT
OUT
- V
= 280mV; V
DDQ
48
)/I
OH
C
≤ +85°C; V
must be less than 23.4Ω for values of V
OUT
Nom
Micron Technology, Inc. reserves the right to change products or specifications without notice.
/I
OL
512Mb: x4, x8, x16 DDR2 SDRAM
must be less than 23.4Ω for values of V
DDQ
= +1.8V ±0.1V, V
IL(AC)max
Max
IL(DC)max
4
5
to V
© 2004 Micron Technology, Inc. All rights reserved.
IH(AC)min
DD
to V
= +1.8V ±0.1V.
IH(DC)min
DDQ
TT
Units
. This is guaran-
V/ns
- 250mV and
Ω
Ω
= 1.7V;
C
OUT
is between –
is equal to
between
1, 4, 5, 6
Notes
1, 2, 3
1, 2
OUT

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