MT47H32M16HR-3:F Micron Technology Inc, MT47H32M16HR-3:F Datasheet - Page 84

• Manufacturer Part Number: MT47H32M16HR-3:F
• Description: IC DDR2 SDRAM 512MBIT 3NS 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-3:F

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 250mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1466

Extended Mode Register 2 (EMR2)
Figure 39: EMR2 Definition
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Notes:
The extended mode register 2 (EMR2) controls functions beyond those controlled by
the mode register. Currently all bits in EMR2 are reserved, except for E7, which is used
in commercial or high-temperature operations, as shown in Figure 39. The EMR2 is pro-
grammed via the LM command and will retain the stored information until it is program-
med again or until the device loses power. Reprogramming the EMR will not alter the
contents of the memory array, provided it is performed correctly.
Bit E7 (A7) must be programmed as “1” to provide a faster refresh rate on IT and AT
devices if T
EMR2 must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time
tion. Violating either of these requirements could result in an unspecified operation.
E15
0
0
1
1
1. E16 (BA2) is only applicable for densities ≥1Gb, reserved for future use, and must be pro-
2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are re-
E14
BA2
16
0
0
1
0
1
grammed to “0.”
served for future use and must be programmed to “0.”
1
Extended mode register (EMR2)
Extended mode register (EMR3)
BA1
15
Extended mode register (EMR)
MRS
BA0
14
Mode register (MR)
Mode Register Set
C
0
An
n
exceeds 85°C.
2
12
0
A12 A11
0
11
0
10
A10
0
9
A9
0 SRT 0
8
A8
E7
0
1
7
A7 A6 A5 A4 A3
1X refresh rate (0°C to 85°C)
84
6
2X refresh rate (>85°C)
0
5
SRT Enable
0
4
0
3
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
2
MRD before initiating any subsequent opera-
A2 A1 A0
Extended Mode Register 2 (EMR2)
0
1
512Mb: x4, x8, x16 DDR2 SDRAM
0
0
Extended mode
register (Ex)
Address bus
© 2004 Micron Technology, Inc. All rights reserved.