MT47H32M16HR-3:F Micron Technology Inc, MT47H32M16HR-3:F Datasheet - Page 94

• Manufacturer Part Number: MT47H32M16HR-3:F
• Description: IC DDR2 SDRAM 512MBIT 3NS 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16HR-3:F

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 250mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1466

Figure 46: Nonconsecutive READ Bursts
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Notes:
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4.
3. Three subsequent elements of data-out appear in the programmed order following
4. Three subsequent elements of data-out appear in the programmed order following
5. Shown with nominal
6. Example applies when READ commands are issued to different devices or nonconsecu-
CK#
CK#
DQ
DQ
CK
CK
DO n.
DO b.
tive READs.
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
NOP
NOP
T1
T1
CL = 3
t
CL = 4
AC,
NOP
NOP
T2
T2
94
t
DQSCK, and
READ
READ
Bank,
Bank,
Col b
Col b
T3
T3
DO
n
T3n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSQ.
NOP
NOP
512Mb: x4, x8, x16 DDR2 SDRAM
T4
T4
DO
n
T4n
T4n
NOP
NOP
T5
T5
T5n
Transitioning Data
NOP
NOP
T6
T6
DO
b
© 2004 Micron Technology, Inc. All rights reserved.
T6n
T7
T7
NOP
NOP
DO
b
T7n
T7n
Don’t Care
NOP
NOP
T8
T8
READ