MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 10

DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray

MT46H8M32LFB5-6 IT:H

Manufacturer Part Number
MT46H8M32LFB5-6 IT:H
Description
DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H8M32LFB5-6 IT:H

Density
256 Mb
Maximum Clock Rate
166 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
6.5|5 ns
Operating Temperature
-40 to 85 °C
Organization
8Mx32
Address Bus
14b
Access Time (max)
6.5/5ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Figure 3: Functional Block Diagram (x32)
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
BA0, BA1
Address,
CAS#
RAS#
WE#
CKE
CK#
CS#
CK
Address
register
Standard mode
Extended mode
register
register
Control
logic
Refresh
counter
address
Row-
MUX
2
2
Column-
counter/
address
control
Bank
latch
logic
decoder
address
Bank 0
row-
latch
and
1
Sense amplifiers
DM mask logic
I/O gating
decoder
Column
memory
Bank 0
10
array
Bank 1
Bank 2
256Mb: x16, x32 Mobile LPDDR SDRAM
Bank 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
64
64
64
Read
latch
out
CK
CK
drivers
Write
FIFO
and
32
32
Functional Block Diagrams
CK
in
MUX
COL 0
Mask
Data
COL 0
64
8
CK
4
4
32
32
generator
DQS
registers
32
Input
©2008 Micron Technology, Inc. All rights reserved.
Data
4
4
32
32
2
4
32
DQS
DRVRS
4
RCVRS
DQ0–
DQ31
DQS0
DQS1
DQS2
DQS3
DM0
DM1
DM2
DM3

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