MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 70

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 166 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 32: Data Input Timing
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Notes:
Data for any WRITE burst can be truncated by a subsequent PRECHARGE command, as
shown in Figure 42 (page 79) and Figure 43 (page 80). Note that only the data-in
pairs that are registered prior to the
any subsequent data-in should be masked with DM, as shown in Figure 42 (page 79)
and Figure 43 (page 80). After the PRECHARGE command, a subsequent command to
the same bank cannot be issued until
DQS
DM
CK#
DQ
CK
1. WRITE command issued at T0.
2.
3.
4. For x16, LDQS controls the lower byte; UDQS controls the upper byte. For x32, DQS0 con-
5. For x16, LDM controls the lower byte; UDM controls the upper byte. For x32, DM0 con-
4
5
t
t
trols DQ[7:0], DQS1 controls DQ[15:8], DQS2 controls DQ[23:16], and DQS3 controls
DQ[31:24].
trols DQ[7:0], DM1 controls DQ[15:8], DM2 controls DQ[23:16], and DM3 controls
DQ[31:24].
DSH (MIN) generally occurs during
DSS (MIN) generally occurs during
t
WPRES
T0
t
1
DQSS
t DS
T1
D
IN
t
WPRE
t
DSH
t DH
70
T1n
2
t
Transitioning Data
t
DQSL
DSS
256Mb: x16, x32 Mobile LPDDR SDRAM
t
WR period are written to the internal array, and
3
t
T2
t
RP is met.
t
DQSS (MAX).
DQSS (MIN).
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
t
DQSH
DSH
T2n
2
t
t
WPST
DSS
3
T3
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation