MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 88

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 166 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

SELF REFRESH Operation
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
The SELF REFRESH command can be used to retain data in the device while the rest of
the system is powered down. When in self refresh mode, the device retains data without
external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command, except that CKE is disabled (LOW). All command and address input signals
except CKE are “Don’t Care” during self refresh.
During self refresh, the device is refreshed as defined in the extended mode register.
(see Partial-Array Self Refresh (page 54).) An internal temperature sensor adjusts the
refresh rate to optimize device power consumption while ensuring data integrity. (See
Temperature-Compensated Self Refresh (page 53).)
The procedure for exiting self refresh requires a sequence of commands. First, CK must
be stable prior to CKE going HIGH. When CKE is HIGH, the device must have NOP com-
mands issued for
During SELF REFRESH operation, refresh intervals are scheduled internally and may
vary. These refresh intervals may differ from the specified
the SELF REFRESH command must not be used as a substitute for the AUTO REFRESH
command.
t
XSR to complete any internal refresh already in progress.
88
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SELF REFRESH Operation
t
REFI time. For this reason,
©2008 Micron Technology, Inc. All rights reserved.