MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 94

DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray

MT46H8M32LFB5-6 IT:H

Manufacturer Part Number
MT46H8M32LFB5-6 IT:H
Description
DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46H8M32LFB5-6 IT:H

Density
256 Mb
Maximum Clock Rate
166 MHz
Package
90VFBGA
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Random Access Time
6.5|5 ns
Operating Temperature
-40 to 85 °C
Organization
8Mx32
Address Bus
14b
Access Time (max)
6.5/5ns
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
Revision History
Rev. H, Production – 11/09
Rev. G, Production – 09/09
Rev. F, Production – 4/09
Rev. E, Production – 3/09
Rev. D, Production – 02/09
Rev. C, Production – 01/09
Rev. B, Preliminary – 10/08
Rev. A, Advance – 08/08
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
• Corrected seating plane values on package dimension drawings from 0.12 to 0.1.
• New format release.
• Table 9, Electrical Characteristics and Recommended AC Operating Conditions: Add-
• SELF REFRESH section: Added a second paragraph.
• Figure 49, Self Refresh Mode: Added
• Table 6, I
• Table 9, Electrical Characteristics and Recommended AC Operating Condition: Upda-
• Figure 15, Initialize and Load Mode Registers: Updated
• Figure 16, Alternate Initialization with CKE LOW: Updated
• Table 7, I
• Updated document status to Production.
• Initialization: Updated description for item 1.
• Updated document status to Preliminary.
• Options, page 1: Changed plastic “green” package marking for 60-ball and 90-ball
• Tables 6 and 7, I
• Changed
• Table 3, Absolute Maximum Ratings: Changed values for V
• Table 9, Electrical Characteristics and Recommended AC Operating Conditions:
• Initial release.
ed a note to the
ues), I
ted note 18.
110mA.
VFBGA.
for the x16; changed the I
Changed values for
and
t
DS
DD4R
F
DD
DD
-6 MIN;
t
RFC (MIN) for all speed grades.
, and I
Specifications and Conditions (x16): Tightened x16 I
Specifications and Conditions (x32): Relaxed I
t
DD
CKE symbol.
DD4W
t
IS
Specifications and Conditions: Changed I
t
F
AC(3) -75 MIN;
-6 MIN;
values for all speed grades.
DD5
94
condition for the x16 and x32.
t
DQSCK MAX;
256Mb: x16, x32 Mobile LPDDR SDRAM
t
AC (MAX) for -5;
t
Micron Technology, Inc. reserves the right to change products or specifications without notice.
CKE line.
t
HZ, CL = 3, MAX.
t
DQSCK,CL = 3, -75 MIN;
DD5
DD
©2008 Micron Technology, Inc. All rights reserved.
DD5
/V
values from 100mA to
Revision History
DDQ
DD0
for all speed grades
(MIN) and V
(-5 and -54 val-
t
DH
IN
.
F

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