MT46H8M32LFB5-6 IT:H Micron Technology Inc, MT46H8M32LFB5-6 IT:H Datasheet - Page 86

• Manufacturer Part Number: MT46H8M32LFB5-6 IT:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6 IT:H

• Density: 256 Mb
• Maximum Clock Rate: 166 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx32
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 47: Bank Write – Without Auto Precharge
Command
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
6
t
t
IS
IS
NOP
T0
t
t
IH
1
IH
Notes:
t
t
IS
ACTIVE
Bank x
IS
Row
Row
T1
t
t
IH
IH
t
CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. PRE = PRECHARGE.
4. Disable auto precharge.
5. Bank x at T8 is “Don’t Care” if A10 is HIGH at T8.
6. D
these times.
t
OUT
t
RCD
RAS
NOP
n = data-out from column n.
T2
1
t
CH
t
CL
t
WRITE
Bank x
Note 4
IS
Col n
t
WPRES
T3
t
t
IH
DQSS (NOM)
2
86
t
DS
NOP
D
T4
t
256Mb: x16, x32 Mobile LPDDR SDRAM
DH
IN
t
WPRE
1
T4n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSL
NOP
T5
t
1
DQSH
T5n
t
WPST
NOP
T6
1
Don’t Care
©2008 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
NOP
WR
T7
1
Transitioning Data
One bank
All banks
Bank x
T8
PRE
3
5
t
RP