MPC8343VRAGDB Freescale Semiconductor, MPC8343VRAGDB Datasheet - Page 15

• Manufacturer Part Number: MPC8343VRAGDB
• Description: IC MPU POWERQUICC II 620-PBGA
• Manufacturer: Freescale Semiconductor
• Series: PowerQUICC II PROr

Specifications of MPC8343VRAGDB

• Processor Type: MPC83xx PowerQUICC II Pro 32-Bit
• Speed: 400MHz
• Voltage: 1.2V
• Mounting Type: Surface Mount
• Package / Case: 620-PBGA
• Processor Series: MPC8xxx
• Core: e300
• Data Bus Width: 32 bit
• Development Tools By Supplier: MPC8349E-MITXE
• Maximum Clock Frequency: 400 MHz
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• I/o Voltage: 1.8 V, 2.5 V, 3.3 V
• Minimum Operating Temperature: 0 C
• Core Size: 32 Bit
• Program Memory Size: 64KB
• Cpu Speed: 400MHz
• Embedded Interface Type: I2C, SPI, USB, UART
• Digital Ic Case Style: BGA
• No. Of Pins: 620
• Rohs Compliant: Yes
• Family Name: MPC83xx
• Device Core: PowerQUICC II Pro
• Device Core Size: 32b
• Frequency (max): 400MHz
• Instruction Set Architecture: RISC
• Supply Voltage 1 (typ): 1.2V
• Operating Supply Voltage (max): 1.26V
• Operating Supply Voltage (min): 1.14V
• Operating Temp Range: 0C to 105C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 620
• Package Type: BGA
• For Use With: CWH-PPC-8343N-VX - KIT EVAL SYSTEM QUICCSTART 8248CWH-PPC-8343N-VE - EVALUATION SYSTEM QUICC MPC8343E
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 13
Table 14
GV
Freescale Semiconductor
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Input/output capacitance: DQ, DQS, DQS
Delta input/output capacitance: DQ, DQS, DQS
Note:
1. This parameter is sampled. GV
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
on MV
MV
DD
TT
DD
REF
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to equal
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM GV
REF
. This rail should track variations in the DC level of MV
is expected to equal 0.5 × GV
provides the DDR2 capacitance when GV
provides the recommended operating conditions for the DDR SDRAM component(s) when
Table 12. DDR2 SDRAM DC Electrical Characteristics for GV
Parameter/Condition
MPC8343EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 10
cannot exceed ±2% of the DC value.
Parameter/Condition
Table 14. DDR SDRAM DC Electrical Characteristics for GV
OUT
OUT
OUT
.
= 0.280 V)
= 1.420 V)
= 1.95 V)
Table 13. DDR2 SDRAM Capacitance for GV
DD
= 1.8 V ± 0.090 V, f = 1 MHz, T
DD
, and to track GV
Symbol
MV
MV
GV
V
I
V
V
I
V
I
V
I
V
I
OZ
OH
OH
OL
OZ
TT
TT
REF
IH
IH
IL
REF
IL
DD
DD
DD
at all times.
≤
DD
DC variations as measured at the receiver. Peak-to-peak noise
V
MV
REF
MV
Symbol
0.49 × GV
(typ) =
OUT
MV
MV
0.49 × GV
C
REF
C
.
REF
DIO
–13.4
A
IO
REF
REF
–0.3
–9.9
13.4
≤
2.375
–15.2
–0.3
–9.9
= 25°C, V
Min
+ 0.125
GV
– 0.04
1.8 V.
+ 0.18
– 0.04
DD
DD
DD
.
OUT
DD
Min
—
6
DD
(typ) = 1.8 V
= GV
MV
MV
(typ) = 1.8 V (continued)
0.51 × GV
MV
MV
GV
0.51 × GV
GV
REF
REF
DD
DD
DD
REF
REF
2.625
9.9
DD
—
—
Max
–9.9
/2, V
—
– 0.125
(typ) = 2.5 V
+ 0.04
+ 0.3
+ 0.04
+ 0.3
– 0.18
Max
0.5
DD
OUT
8
DD
(peak-to-peak) = 0.2 V.
DDR and DDR2 SDRAM
Unit
Unit
mA
mA
mA
μA
μA
pF
pF
V
V
V
V
V
V
V
V
V
Notes
Notes
—
—
—
—
—
—
—
2
3
4
1
2
3
4
1
1
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