ATtiny40 Atmel Corporation, ATtiny40 Datasheet - Page 162

• Manufacturer Part Number: ATtiny40
• Manufacturer: Atmel Corporation

Specifications of ATtiny40

• Flash (kbytes): 4 Kbytes
• Pin Count: 20
• Max. Operating Frequency: 12 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 12
• Hardware Qtouch Acquisition: Yes
• Max I/o Pins: 18
• Ext Interrupts: 18
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 12
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 0.25
• Self Program Memory: NO
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8 to 5.5
• Operating Voltage (vcc): 1.8 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 4
• Input Capture Channels: 1
• Pwm Channels: 2
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

20.4.3.2
20.4.3.3
20.4.3.4
20.4.3.5
162
ATtiny40
Erasing the Code Section
Writing Flash Code Words
Erasing the Configuration Section
Writing a Configuration Word
The algorithm for erasing all pages of the Flash code section is as follows:
The algorithm for writing four words to the code section is as follows:
The algorithm for erasing the Configuration section is as follows:
The algorithm for writing a Configuration word is as follows.
1. Write the SECTION_ERASE command to the NVMCMD register
2. Start the erase operation by writing a dummy byte to the high byte of any word location
3. Wait until the NVMBSY bit has been cleared
1. Write the CODE_WRITE command to the NVMCMD register
2. Write the low byte of the 1st word to the low byte of a target word location
3. Write the high byte of the 1st word to the high byte of the same target word location
4. Send IDLE character as described in section
5. Write the low byte of the 2nd word to the low byte of the next target word location
6. Write the high byte of the 2nd word to the high byte of the same target word location.
7. Send IDLE character as described in section
8. Write the low byte of the 3rd word to the low byte of a target word location
9. Write the high byte of the 3rd word to the high byte of the same target word location
10. Send IDLE character as described in section
11. Write the low byte of the 4th word to the low byte of the next target word location
12. Write the high byte of the 4th word to the high byte of the same target word location.
13. Wait until the NVMBSY bit has been cleared
1. Write the SECTION_ERASE command to the NVMCMD register
2. Start the erase operation by writing a dummy byte to the high byte of any word location
3. Wait until the NVMBSY bit has been cleared
1. Write the CODE_WRITE command to the NVMCMD register
2. Write the low byte of the data word to the low byte of the configuration word location
3. Write the high byte of the data word to the high byte of the same configuration word
4. Send IDLE character as described in section
5. Write a dummy byte to the low byte of the next configuration word location
6. Write a dummy byte to the high byte of the same configuration word location.
7. Send IDLE character as described in section
inside the code section
This will start the Flash write operation
inside the configuration section
location
“Supported Characters” on page 147
“Supported Characters” on page 147
“Supported Characters” on page 147
“Supported Characters” on page 147
“Supported Characters” on page 147
8263A–AVR–08/10