ATtiny43U Atmel Corporation, ATtiny43U Datasheet - Page 145

• Manufacturer Part Number: ATtiny43U
• Manufacturer: Atmel Corporation

Specifications of ATtiny43U

• Flash (kbytes): 4 Kbytes
• Pin Count: 20
• Max. Operating Frequency: 8 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 8
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 16
• Ext Interrupts: 16
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 4
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 0.25
• Eeprom (bytes): 64
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 0.7 to 5.5
• Operating Voltage (vcc): 0.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 4
• Pwm Channels: 4
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

19.6.3
19.6.4
8048B–AVR–03/09
Chip Erase
Programming the Flash
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
B. Load Address Low byte
C. Load Data Low Byte
D. Load Data High Byte
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give CLKI a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give CLKI a positive pulse. This loads the command.
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 - 0xFF).
4. Give CLKI a positive pulse. This loads the address low byte.
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte (0x00 - 0xFF).
3. Give CLKI a positive pulse. This loads the data byte.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Table 19-8 on page
(1)
memories plus Lock bits. The Lock bits are
142. When programming the Flash,
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