kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 108

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

2X Program Operation Flow Diagram
NOTE :
1) DBS must be set before data input.
2) Data input could be done anywhere between "Start" and "Write Program Command"
3) FBA must be an even block.
4) These registers must be set as BSA=1000, BSC=00 and FSA=00.
5) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Write ‘BSA, BSC’ of DataRAM
Add: F100h DQ=DFS*, FBA
Add: F107h DQ=FPA, FSA
Add: F200h DQ=BSA, BSC
Write Data into DataRAM
Write ‘DFS*, FBA’ of Flash
Select DataRAM for DDP
Write ‘FPA, FSA’ of Flash
Add: F101h DQ=DBS*
ADD: DP DQ=Data-in
Completed?
Data Input
Start
YES
* DBS, DFS is for DDP
1)
2)
4)
3)
4)
NO
Write 0 to interrupt register
Write ‘2X Program’ Command
Add: F240h DQ[10]=Error
Add: F241h DQ[15]=INT
Add: F220h DQ=007Dh
Add: F241h DQ=0000h
Read Interrupt register
low to high transition
Add: F241h DQ[6]=WI
Program completed
Wait for INT register
Read Controller
Status Register
DQ[10]=0?
DQ[6]=1?
*
- 108 -
: If program operation results in an error, map out
YES
YES
the block including the page in error and copy the
target data to another block.
5)
NO
Status Register ‘Lock’ bit high
Add: F240h DQ[14]=Lock
Program Lock Error
Program Error
Read Controller
FLASH MEMORY
NO