kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 144

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

5.7 AC Characteristics for Asynchronous Write
5.8 AC Characteristics for Burst Write Operation
NOTE :
1) Target Clock frequency is 83Mhz.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
WE Cycle Time
AVD low pulse width
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
WE Pulse Width High
WE Disable to AVD Enable
CE Low to RDY Valid
CE Disable to Output & RDY High Z
Clock
Clock Cycle
AVD Setup to CLK
AVD Hold Time from CLK
Address Setup Time to CLK
Address Hold Time from CLK
Data Setup Time to CLK
Data Hold Time from CLK
WE Setup Time to CLK
WE Hold Time from CLK
CLK High or Low Time
CE high pulse width
CLK to RDY Valid
CLK to RDY Setup Time
RDY Setup Time to CLK
CE low to RDY valid
Clock to CE disable
CE Setup Time to CLK
CE Disable to Output & RDY High Z
See Timing Diagrams 6.7
See Timing Diagrams 6.8, 6.9 and 6.10
Parameter
Parameter
tCLKH/L
Symbol
tCEHP
tRDYO
tRDYS
tAVDS
tAVDH
tRDYA
CLK
tWDS
tWDH
tWEH
tWES
tACS
tACH
tCER
tCEH
tCES
tCEZ
tCLK
1)
tCLK/3
Min
15
10
- 144 -
1
5
2
5
6
5
2
5
6
4
2
6
-
-
-
-
tAAVDH
Symbol
tAAVDS
tAVDP
tWPH
tWEA
tWPL
tCER
tCEZ
66MHz
tWC
tDS
tDH
tCS
tCH
tCLK - 4.5
Max
66
11
11
15
20
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
70
12
30
40
30
15
5
6
0
0
0
-
-
Min
4.5
12
10
1
4
2
4
6
4
2
4
6
5
3
2
-
-
-
-
83MHz
FLASH MEMORY
tCLK - 4.5
Max
15
20
-
-
-
-
-
-
-
-
-
-
-
Max
83
15
20
9
9
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
MHz
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns