kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 141

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

5.0 AC CHARACTERISTICS
5.1 AC Test Conditions
5.2 Device Capacitance
CAPACITANCE
NOTE :
Capacitance is periodically sampled and not 100% tested.
5.3 Valid Block Characteristics
NOTE :
1) The
2) The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Input Capacitance
Control Pin Capacitance
Output Capacitance
INT Capacitance
both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
blocks.
device
Valid Block Number
V
0V
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with
CC
Item
Parameter
V
CC
(T
/2
A
= 25 °C, V
Input Pulse and Test Point
Parameter
Input & Output
Test Point
CC
Symbol
Single
CLK
other inputs
DDP
C
C
C
C
= 1.8V, f = 1.0MHz)
OUT
IN1
IN2
INT
Symbol
Test Condition
N
VB
V
V
V
V
OUT
OUT
V
IN
IN
CC
=0V
=0V
=0V
=0V
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Min
Min
-
-
-
-
Device
Under
Test
Single
Value (66MHz)
C
0V to V
L
V
Typ.
3ns
5ns
= 30pF
Max
CC
Output Load
10
10
10
10
-
-
/2
CC
* C
.
L
Do not erase or program factory-marked bad
= 30pF including scope
and Jig capacitance
Min
-
-
-
-
2048
4096
Max
DDP
FLASH MEMORY
Value (83MHz)
Max
20
20
20
20
C
0V to V
L
V
2ns
2ns
= 30pF
CC
/2
CC
Blocks
Blocks
Unit
Unit
pF
pF
pF
pF