kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 116

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

3.13 Erase Operation
There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase.
3.13.1 Block Erase Operation
The Block Erase Operation is done on a block basis. To erase a block is to write all 1's into the desired memory block by executing the Internal
Erase Routine. All previous data is lost.
Block Erase Operation Flow Chart
NOTE :
1) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Write 0 to interrupt register
Add: F100h DQ=DFS*, FBA
Write ‘DFS*, FBA’ of Flash
See Timing Diagram 6.16
Add: F241h DQ=[15]=INT
Select DataRAM for DDP
Write ‘Erase’ Command
Add: F240h DQ[10]=Error
Read Interrupt register
Add: F241h DQ=0000h
Add: F220h DQ=0094h
Add: F101h DQ=DBS*
low to high transition
Add: F241h DQ[5]=EI
Wait for INT register
Erase completed
Read Controller
Status Register
DQ[10]=0?
DQ[5]=1?
Start
YES
YES
1)
NO
Status Register ‘Lock’ bit high
Erase Error
Add: F240h DQ[14]=Lock
Erase Lock Error
Read Controller
NO
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
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* DFS is for DDP
FLASH MEMORY