kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 164

• Manufacturer Part Number: kfm2g16q2a-deb8
• Description: 2gb Muxonenand A-die
• Manufacturer: Samsung Semiconductor, Inc.

6.22 Toggle Bit Timing in Asynchronous Read
NOTE :
1) VA=Valid Read Address, RD=Read Data.
2) Before IOBE is set to 1, RDY and INT pin are High-Z state.
3) Refer to chapter 5.5 for tASO description and value.
6.23 Toggle Bit Timing in Asynchronous Read
NOTE :
1) VA=Valid Read Address, RD=Read Data.
2) Before IOBE is set to 1, RDY and INT pin are High-Z state.
3) Refer to chapter 5.5 for tASO description and value.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
A/DQ15
A/DQ15
A/DQ0:
A/DQ0:
RDY
RDY
AVD
AVD
WE
WE
OE
CE
OE
CE
2)
2)
See AC Characteristics Table 5.5
See AC Characteristics Table 5.5
(VA Transition Before AVD Low)
(VA Transition After AVD Low)
Hi-Z
t
t
t
AAVDS
CER
AAVDS
t
t
t
CER
AVDO
CA
t
ASO
VA
t
CA
1)
t
t
ASO
AA
t
VA
t
AVDP
CE
t
t
1)
t
OE
ACC
AVDP
t
AAVDH
t
t
AVDO
OE
t
AAVDH
t
RC
t
t
CE
RC
Status RD
Status RD
1)
1)
t
OEZ
t
CEZ
t
OEZ
t
CEZ
- 164 -
Hi-Z
t
CA
Hi-Z
VA
VA
Status RD
Status RD
FLASH MEMORY
Hi-Z
Hi-Z
Hi-Z