kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 77

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kfm2g16q2a-deb8

Manufacturer Part Number
kfm2g16q2a-deb8
Description
2gb Muxonenand A-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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2.8.23 Start Block Address Register F24Ch (R/W)
This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock Block'
command, 'Unlock Block' command, or ‘Lock-Tight' Command.
F24Ch, default = 0000h
SBA Information[10:0]
2.8.24 End Block Address Register F24Dh
This register is reserved for future use.
2.8.25 NAND Flash Write Protection Status Register F24Eh (R)
This Read register shows the Write Protection Status of the NAND Flash memory array.
To read the write protection status, FBA(DFS and DBS also in case of DDP) has to be set before reading the register
F24Eh, default = 0002h
Write Protection Status Information[2:0]
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
15
15
Item
LTS
US
LS
Item
SBA
14
14
Reserved(000000)
Unlocked Status
Locked Status
Locked-Tight Status
Device
13
13
2Gb
12
12
Definition
Start Block Address
11
11
Definition
Reserved(0000000000000)
10
10
9
9
1 = current NAND Flash block is unlocked
1 = current NAND Flash block is locked
Or First Block of NAND Flash Array is Locked to be OTP
1 = current NAND Flash block is locked-tight
Number of Block
8
8
2048
- 77 -
Precedes Lock Block, Unlock Block, or Lock-Tight commands
7
7
6
6
SBA
5
5
Description
Description
4
4
3
3
FLASH MEMORY
[10:0]
SBA
.
US
2
2
LS
1
1
LTS
0
0

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