kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 137

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kfm2g16q2a-deb8

Manufacturer Part Number
kfm2g16q2a-deb8
Description
2gb Muxonenand A-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Invalid Block Table Creation Flow Chart
3.18.2 Invalid Block Replacement Operation
Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for the
actual data.
The following possible failure modes should be considered to implement a highly reliable system.
In the case of a status read failure after erase or program, a block replacement should be done. Because program status failure during a page
program does not affect the data of the other pages in the same block, a block replacement can be executed with a page-sized buffer by find-
ing an erased empty block and reprogramming the current target data and copying the rest of the replaced block.
Block Failure Modes and Countermeasures
MuxOneNAND2G(KFM2G16Q2A-DEBx)
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Erase Failure
Program Failure
Single Bit Failure in Load Operation
Increment Block Address
Failure Mode
Invalid Block(s) Table
Create (or update)
No
No
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Error Correction by ECC mode of the device
Set Block Address = 0
Last Block ?
"FFFFh" ?
Check
Start
End
- 137 -
Yes
Yes
Detection and Countermeasure sequence
*
Check "FFFFh" at the 1st word of sector 0
of spare area in 1st and 2nd page
FLASH MEMORY

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