kfm2g16q2a-deb8 Samsung Semiconductor, Inc., kfm2g16q2a-deb8 Datasheet - Page 93
kfm2g16q2a-deb8
Manufacturer Part Number
kfm2g16q2a-deb8
Description
2gb Muxonenand A-die
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KFM2G16Q2A-DEB8.pdf
(173 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KFM2G16Q2A-DEB8
Manufacturer:
SAMSUNG
Quantity:
16 056
Company:
Part Number:
KFM2G16Q2A-DEB8
Manufacturer:
JRC
Quantity:
1 410
- Current page: 93 of 173
- Download datasheet (3Mb)
3.7 Read Operation
The device has two read modes; Asynchronous Read and Synchronous Burst Read.
The initial state machine automatically sets the device into the Asynchronous Read Mode (RM=0) to prevent the spurious altering of memory
content upon device power up or after a Hardware reset. No commands are required to retrieve data in Asynchronous Read Mode.
The Synchronous Read Mode is enabled by setting RM bit of System Configuration1 Register (F221h) to Synchronous Read Mode (RM=1).
See Section 2.8.19 for more information about System Configuration1 Register.
3.7.1 Asynchronous Read Mode Operation (RM=0, WM=0)
In an Asynchronous Read Mode, data is output with respect to a logic input, AVD.
Output data will appear on DQ15-DQ0 when a valid address is asserted on A15-A0 while driving AVD and CE to VIL. WE is held at VIH. The
function of the AVD signal is to latch the valid address.
Address access time from AVD low (tAA) is equal to the delay from valid addresses to valid output data.
The Chip Enable access time (tCE) is equal to the delay from the falling edge of CE to valid data at the outputs.
The Output Enable access time (tOE) is the delay from the falling edge of OE to valid data at the output.
3.7.2 Synchronous Read Mode Operation (RM=1, WM=X)
In a Synchronous Read Mode, data is output with respect to a clock input.
The device is capable of a continuous linear burst operation and a fixed-length linear burst operation of a preset length. Burst address
sequences for continuous and fixed-length burst operations are shown in the table below.
Burst Address Sequences
In the burst mode, the initial word will be output asynchronously, regardless of BRWL. While the following words will be determined by BRWL
value.
The latency is determined by the host based on the BRWL bit setting in the System Configuration 1 Register. The default BRWL is 4 latency
cycles. At clock frequencies of 40MHz or lower, latency cycles can be reduced to 3. BRWL can be set up to 7 latency cycles.
The BRWL registers can be read during a burst read mode by using the AVD signal with an address.
MuxOneNAND2G(KFM2G16Q2A-DEBx)
around
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Wrap
See Timing Diagrams 6.1, 6.2, 6.5, and 6.6
See Timing Diagrams 6.5 and 6.6
See Timing Diagrams 6.1 and 6.2
Addr.
Start
0
1
2
.
.
0-1-2-3-4-5-6-..-0-1...
1-2-3-4-5-6-7-..-1-2...
2-3-4-5-6-7-8-..-2-3...
Continuous Burst
.
.
4-word Burst
0-1-2-3-0...
1-2-3-0-1...
2-3-0-1-2...
.
.
Burst Address Sequence(Decimal)
0-1-2-3-4-5-6-7-0...
1-2-3-4-5-6-7-0-1...
2-3-4-5-6-7-0-1-2...
8-word Burst
- 93 -
.
.
0-1-2-3-4-....-13-14-15-0... 0-1-2-3-4-....-29-30-31-0...
1-2-3-4-5-....-14-15-0-1...
2-3-4-5-6-....-15-0-1-2...
16-word Burst
.
.
FLASH MEMORY
1-2-3-4-5-....-30-31-0-1...
2-3-4-5-6-....-31-0-1-2...
32-word Burst
.
.
Related parts for kfm2g16q2a-deb8
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Transistor,mosfet,n-channel,200v V Br Dss,5.9a
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Samsung Power Switch
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Samsung Pm410 Ssd 1.8 Lif 128/64gb
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Low Voltage Audio Power Amp
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Dual Equalizer Amplifier With Alc
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Low Dropout Voltage Regulator
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
1 Chip Codec For Digital Answering Phone
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
10/15 Ch Pll
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Flextm Roaming Decoder Ii
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
128k X 8bit Low Power And Low Voltage Cmos Statinc Ram
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Ballast/backlight Controller/driver,sop,20pin,plastic
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
3 Channel R.g.b Video Amplifier
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Rgb Encoder For Pal/ntsc
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
R/g/b Video Amplifier With Osd Interface For Monitors
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet:
Part Number:
Description:
Remote Control Preamplifier
Manufacturer:
Samsung Semiconductor, Inc.
Datasheet: