MC68HC908KX2 MOTOROLA [Motorola, Inc], MC68HC908KX2 Datasheet - Page 51
MC68HC908KX2
Manufacturer Part Number
MC68HC908KX2
Description
Microcontrollers
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MC68HC908KX2.pdf
(311 pages)
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MC68HC908KX8 • MC68HC908KX2 • MC68HC08KX8 — Rev. 1.0
MOTOROLA
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can be set only if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
Setting this read/write bit configures the 8-Kbyte FLASH array for
mass erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
FLASH Memory
FLASH Control Register
FLASH Memory
Technical Data
51
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