TDGL007 Microchip Technology, TDGL007 Datasheet - Page 78

• Manufacturer Part Number: TDGL007
• Description: Development Boards & Kits - PIC / DSPIC DIGILENT CEREBOT MC7 MOTOR CONTROL BRD
• Manufacturer: Microchip Technology

Specifications of TDGL007

• Product: Development Boards
• Interface Type: CAN, I2C
• Operating Supply Voltage: 5 V

dsPIC33FJXXXMCX06A/X08A/X10A
5.4.1
The user can program one row of program Flash
memory at a time. To do this, it is necessary to erase
the 8-row erase page that contains the desired row.
The general process is as follows:
1.
2.
3.
EXAMPLE 5-1:
DS70594C-page 78
; Set up NVMCON for block erase operation
; Init pointer to row to be ERASED
Read
(512 instructions) and store it in data RAM.
Update the program data in RAM with the
desired new data.
Erase the block (see
a)
b)
c)
d)
e)
Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE
(NVMCON<14>) bits.
Write the starting address of the page to be
erased into the TBLPAG and W registers.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
eight
#0x4042, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
(NVMCON<6>)
rows
ERASING A PROGRAM MEMORY PAGE
Example
of
program
5-1):
and
memory
WREN
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as shown
in
Example
Write the first 64 instructions from data RAM into
the program memory buffers (see
Write the program block to Flash memory:
a)
b)
c)
d)
Repeat steps 4 and 5 using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG until all
512 instructions are written back to Flash memory.
Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
Write 0x55 to NVMKEY.
Write 0xAA to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
5-3.
© 2011 Microchip Technology Inc.
Example
5-2).